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| (R) TN25 and TYNx25 Series 25A SCRs STANDARD MAIN FEATURES: Symbol IT(RMS) VDRM/VRRM IGT Value 25 600 to 1000 40 Unit G A A K V A A mA KA G K A DESCRIPTION The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities. D2PAK (TN25-G) G TO-220AB (TYN) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) T(AV) ITSM Parameter RMS on-state current (180 conduction angle) Average on-state current (180 conduction angle) Non repetitive surge peak on-state current It Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range Maximum peak reverse gate voltage tp = 8.3 ms Tj = 25C tp = 10 ms tp = 10 ms F = 60 Hz tp = 20 s Tj = 25C Tj = 125C Tj = 125C Tj = 125C 300 450 50 4 1 - 40 to + 150 - 40 to + 125 5 A2S A/s A W C V Tc = 100C Tc = 100C Value 25 16 314 A Unit A A I t dI/dt IGM PG(AV) Tstg Tj VRGM April 2002 - Ed: 4A 1/7 TN25 and TYNx25 Series ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) Symbol IGT VD = 12 V VGT VGD IH IL dV/dt VTM Vt0 Rd IDRM IRRM VD = VDRM IT = 500 mA IG = 1.2 IGT VD = 67 % VDRM ITM = 50 A Gate open Tj = 125C Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj = 125C RL = 3.3 k Gate open Tj = 125C RL = 33 Test Conditions MIN. MAX. MAX. MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. Value 4 40 1.3 0.2 50 90 1000 1.6 0.77 14 5 4 Unit mA V V mA mA V/s V V m A mA tp = 380 s Threshold voltage Dynamic resistance VDRM = VRRM THERMAL RESISTANCES Symbol Rth(j-c) Rth(j-a) Junction to case (DC) Junction to ambient (DC) S = 1 cm S = Copper surface under tab Parameter Value 1.0 TO-220AB Unit C/W C/W 60 45 D PAK PRODUCT SELECTOR Part Number 600 V TN2540-xxxG TYNx25 X X Voltage (xxx) 800 V X X 1000 V X X 40 mA 40 mA DPAK TO-220AB Sensitivity Package 2/7 TN25 and TYNx25 Series ORDERING INFORMATION TN 25 40 - 600 G (-TR) STANDARD SCR SERIES CURRENT: 25A SENSITIVITY: 40: 40mA VOLTAGE: 600: 600V 800: 800V 1000: 1000V PACKAGE: 2 G: D PAK PACKING MODE: Blank: Tube -TR: Tape & Reel TYN STANDARD SCR SERIES 6 VOLTAGE: 6: 600V 8: 800V 10: 1000V 25 (RG) PACKING MODE Blank: Bulk RG: Tube CURRENT: 25A OTHER INFORMATION Part Number TN2540-x00G TN2540-x00G-TR TYNx25 TYNx25RG Note: x = voltage Marking TN2540x00G TN2540x00G TYNx25 TYNx25 Weight 1.5 g 1.5 g 2.3 g 2.3 g Base Quantity 50 1000 250 50 Packing mode Tube Tape & reel Bulk Tube 3/7 TN25 and TYNx25 Series Fig. 1: Maximum average power dissipation versus average on-state current. P(W) 24 22 20 18 16 14 12 10 8 6 4 2 0 = 180 Fig. 2-1: Average and D.C. on-state current versus case temperature. IT(av)(A) 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 D.C. = 180 360 IT(av)(A) 0 2 4 6 8 10 12 Tcase(C) 0 25 50 75 100 125 14 16 Fig. 2-2: Average and D.C. on-state current versus ambient temperature (copper surface under tab: S = 1 cm (for DPAK). IT(av)(A) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 25 50 Tamb(C) 75 100 125 = 180 D.C. Fig. 3: Relative variation of thermal impedance versus pulse duration. K = [Zth/Rth] 1.00 Zth(j-c) 0.10 Zth(j-a) tp(s) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature. IGT,IH,IL [Tj] / IGT ,IH,IL [Tj = 25 C] 2.5 2.0 IGT Fig. 5: Surge peak on-state current versus number of cycles. ITSM(A) 350 300 tp = 10ms 250 200 1.5 1.0 0.5 Tj(C) 0.0 -40 -20 0 20 40 60 80 100 120 140 IH & IL Non repetitiv e Tj initial = 25 C One cycle 150 100 50 0 1 Repetitive Tcase = 100 C Number of cycles 10 100 1000 4/7 TN25 and TYNx25 Series Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding values of It. ITSM(A),I 2t(A2s) 2000 1000 Tj initial = 25 C Fig. 7: values). On-state characteristics (maximum ITM(A) 300 100 ITSM Tj = Tj max. I2t Tj max.: Vto = 0.77V Rd = 14m dI/dt limitattion 10 Tj = 25C tp(ms) 100 0.01 0.10 1.00 10.00 1 0.0 0.5 1.0 1.5 VTM(V) 2.0 2.5 3.0 3.5 4.0 4.5 Fig. 8: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35 m) (D2PAK). Rth(j-a)( C/W) 80 70 60 50 40 30 20 10 0 0 4 8 12 16 S(cm 2) 20 24 28 32 36 40 5/7 TN25 and TYNx25 Series PACKAGE MECHANICAL DATA D2PAK (Plastic) DIMENSIONS A E L2 C2 REF. Millimeters Min. Typ. Max. 4.60 2.69 0.23 0.93 Min. Inches Typ. Max. D L L3 A1 B2 B G A2 2.0 MIN. FLAT ZONE V2 C R A A1 A2 B B2 C C2 D E G L L2 L3 R V2 4.30 2.49 0.03 0.70 1.25 0.45 1.21 8.95 10.00 4.88 15.00 1.27 1.40 0 1.40 0.40 0.169 0.181 0.098 0.106 0.001 0.009 0.027 0.037 0.048 0.055 0.60 0.017 0.024 1.36 0.047 0.054 9.35 0.352 0.368 10.28 0.393 0.405 5.28 0.192 0.208 15.85 0.590 0.624 1.40 0.050 0.055 1.75 0.055 0.069 0.016 8 0 8 FOOTPRINT DIMENSIONS (in millimeters) D2PAK (Plastic) 16.90 10.30 1.30 5.08 3.70 8.90 6/7 TN25 and TYNx25 Series PACKAGE MECHANICAL DATA TO-220AB (Plastic) DIMENSIONS B C REF. Millimeters Min. Typ. 3.75 Max. Min. Inches Typ. 0.147 Max. 0.625 b2 L F I A l4 a1 c2 l3 l2 a2 b1 e M c1 A a1 a2 B b1 b2 C c1 c2 e F I I4 L l2 l3 M 15.20 15.90 0.598 13.00 14.00 0.511 0.551 10.00 10.40 0.393 0.409 0.61 0.88 0.024 0.034 1.23 1.32 0.048 0.051 4.40 4.60 0.173 0.181 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 2.40 2.70 0.094 0.106 6.20 6.60 0.244 0.259 3.75 3.85 0.147 0.151 15.80 16.40 16.80 0.622 0.646 0.661 2.65 2.95 0.104 0.116 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 2.60 0.102 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Isreal - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7 |
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